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www.irf.com 1 advanced process technology ultra low on-resistance dual n and p channel mosfet surface mount available in tape & reel 150c operating temperature lead-free these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremelylow on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating.these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. so-8 pd - 96110a downloaded from: http:///
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www.irf.com 3 1 10 100 3 4 5 6 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j

1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j downloaded from: http:///
4 www.irf.com 0 10 20 30 40 0.040 0.060 0.080 0.100 0.120 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v !"# " $%""&' (

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( ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 4.7a 25 50 75 100 125 150 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.1a 3.8a 4.7a 0.04 0.06 0.08 0.10 0.12 024681 0 a gs v , gate-to-source voltage (v) i = 4.7a d downloaded from: http:///
www.irf.com 5 1 10 100 0 200 400 600 800 1000 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss $%""( ' "*" +, &"-
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0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.5a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
6 www.irf.com 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v

0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v 1 10 100 3 4 5 6 7 v = -25v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j downloaded from: http:///
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0 2 4 6 8 10 12 0.080 0.120 0.160 0.200 0.240 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v @ a -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4 a 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.5a -2.7a -3.4a 3 "
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( ) 0.05 0.15 0.25 0.35 0.45 2581 11 4 a gs -v , gate-to-source voltage (v) i = -3.4 a d downloaded from: http:///
8 www.irf.com 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.1a v = -12v ds v = -30v ds v = -48v ds
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$%""( ' "*" +, &"- 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 1 10 100 0 240 480 720 960 1200 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss downloaded from: http:///
www.irf.com 9 so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx int ernat ional rectifier logo f7101 y = las t digit of t he year part number lot code ww = we e k example: t his is an irf7101 (mos fet ) p = designates lead-free product (opt ional) a = as s e mb l y s i t e code

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10 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. downloaded from: http:///

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